unisonic technologies co., ltd 12n60 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-170.k 12a, 600v n-channel power mosfet ? description the utc 12n60 are n-channel enhancement mode power field effect transistors (mosfet) which are produced using utc?s proprietary, planar stripe, dmos technology. these devices are suited for high efficiency switch mode power supply. to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. ? features * r ds(on) < 0.8 ? @v gs = 10 v * ultra low gate charge ( typical 42 nc ) * low reverse transfer capacitance ( c rss = typical 25 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 12n60l-ta3-t 12n60g-ta3-t to-220 g d s tube 12n60l-tf1-t 12n60g-tf1-t to-220f1 g d s tube 12n60l-tf2-t 12n60g-tf2-t to-220f2 g d s tube 12n60l-tf3-t 12n60g-tf3-t to-220f g d s tube 12n60l-t2q-t 12N60G-T2Q-T to-262 g d s tube 12n60l-t3p-t 12n60g-t3p-t to-3p g d s tube note: pin assignment: g: gate d: drain s: source
12n60 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-170.k ? marking
12n60 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-170.k ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 12 a drain current continuous i d 12 a pulsed (note 2) i dm 48 a avalanche energy single pulsed (note 3) e as 790 mj repetitive (note 2) e ar 24 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 / to-262 p d 225 w to-220f / to-220f1 51 w to-220f2 54 w to-3p 260 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 10mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 12a, di/dt 200a/s, v dd bv dss starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient to-220/to-220f to-220f1/to-220f2 to-262 ja 62.5 c/w to-3p 40 c/w junction to case to-220 / to-262 jc 0.56 c/w to-220f/to-220f1 2.43 c/w to-220f2 2.31 c/w to-3p 0.48 c/w
12n60 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-170.k ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600 v, v gs = 0 v 1 a gate-source leakage current i gss v gs = 30 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 6.0a 0.6 0.8 ? dynamic characteristics input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1mhz 1480 1900 pf output capacitance c oss 200 270 pf reverse transfer capacitance c rss 25 35 pf gate resistance r g v ds =0v, v gs =0v, f =1mhz 0.2 1.2 ? switching characteristics turn-on delay time t d ( on ) v dd = 300v, i d = 12a, r g = 25 ? (note 1, 2) 30 70 ns turn-on rise time t r 115 240 ns turn-off delay time t d ( off ) 95 200 ns turn-off fall time t f 85 180 ns total gate charge q g v ds = 480v,i d = 12a, v gs = 10 v (note 1, 2) 42 54 nc gate-source charge q gs 8.6 nc gate-drain charge q gd 21 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 12a 1.4 v maximum continuous drain-source diode forward current i s 12 a maximum pulsed drain-source diode forward current i sm 48 a reverse recovery time t r r v gs = 0 v, i s = 12a, di f /dt = 100 a/s (note 1) 380 ns reverse recovery charge q rr 3.5 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
12n60 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-170.k ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
12n60 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-170.k ? test circuits and waveforms (cont.) switching test circuit switching waveforms 50k 0.3 f dut v ds same type as d.u.t. 10v 0.2 f 12v charge q gs q gd q g v gs 3ma v gs gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
12n60 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-170.k ? typical characteristics -55c 25c 10 1 10 0 10 -1 24 6810 gate-source voltage, v gs (v) transfer characteristics notes: 250s pulse test t c =25c top: v gs 15v 10v 8.0v 7.0v 6.5v 6.0v bottom: 5.5v 10 1 10 0 10 -1 10 0 10 1 drain-source voltage, v gs (v) on-resign characteristics 150c notes: 1.v ds =50v 2.250s pulse test
12n60 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-170.k ? typical characteristics drain current, i d (a) thermal response, z jc (t) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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